Product Description
| Feature | Specification |
|---|---|
| Model Code | MZ-VAP1T0BW |
| Series | 9100 PRO |
| Capacity | 1TB |
| Form Factor | M.2 2280 |
| Interface | PCIe® 5.0 x4, NVMe™ 2.0 |
| NAND Flash | Samsung V-NAND TLC (V8) |
| Controller | Samsung In-house Controller |
| Cache Memory | 1GB LPDDR4X SDRAM |
| Sequential Read Speed | Up to 14,700 MB/s |
| Sequential Write Speed | Up to 13,300 MB/s |
| Random Read (4KB, QD32) | Up to 1,850,000 IOPS |
| Random Write (4KB, QD32) | Up to 2,600,000 IOPS |
| Encryption | AES 256-bit (Class 0), TCG/Opal v2.0, IEEE1667 |
| TRIM Support | Yes |
| S.M.A.R.T Support | Yes |
| Garbage Collection | Auto Garbage Collection Algorithm |
| Device Sleep Mode Support | Yes |
| Power Consumption (Active) | Read: Avg 7.6W / Write: Avg 7.2W |
| Power Consumption (Idle) | Max 4.0 mW |
| Power Consumption (Sleep) | Max 3.3 mW |
| Operating Temperature | 0°C to 70°C |
| Shock Resistance | 1,500 G & 0.5 ms (Half sine) |
| Dimensions (W x H x D) | 80.15 x 22.15 x 2.38 mm |
| Weight | Max 9.0g |
| MTBF | 1.5 Million Hours |
| Warranty | 5-Year Limited Warranty or 600 TBW |
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